Magnetic anisotropy control in Ga1−xMnxAs magnetic semiconductors
| Autor: | S. Stagraczyński, Cz. Jasiukiewicz, Vitalii K. Dugaev, Jamal Berakdar |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Condensed matter physics business.industry Doping Demagnetizing field 02 engineering and technology Magnetic semiconductor 021001 nanoscience & nanotechnology Condensed Matter Physics Magnetocrystalline anisotropy 01 natural sciences Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Magnetization Magnetic anisotropy Semiconductor 0103 physical sciences 010306 general physics 0210 nano-technology Anisotropy business |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 411:79-83 |
| ISSN: | 0304-8853 |
| Popis: | Using the six-band Kane model of the electron energy spectrum in the valence band of GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic anisotropy on the magnitude of magnetization and on the doping with holes. Our main focus is on the difference between two possible models related to the constraint on the total hole number or on the chemical potential. Our results show that the theoretical results for magnetic anisotropy can change dramatically with the use of different constraints. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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