THE INFLUENCE OF BIAS CURRENT UPON THE FREQUENCY CHARACTERISTICS AND STABILITY OF METAL-SCHOTTKY GATE FIELD-EFFECT TRANSISTORS (MS-GFET)

Autor:	N. I. Slipchenko, E. E. Asanov, G. V. Kilessa, S. A. Zuev
Rok vydání:	2012
Předmět:	Metal Materials science Computer simulation business.industry visual_art visual_art.visual_art_medium Optoelectronics Schottky gate Biasing Field-effect transistor Electrical and Electronic Engineering business Stability (probability)
Zdroj:	Telecommunications and Radio Engineering. 71:1361-1370
ISSN:	0040-2508
DOI:	10.1615/telecomradeng.v71.i15.30
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::24d61a938ba244584018bfffa1bfdd9f https://doi.org/10.1615/telecomradeng.v71.i15.30 Zobrazit plný text záznamu