Influence of excess sulfur pressure during growth of CdS crystals on the characteristics of electron-beam-excited lasers

Autor: V. I. Reshetov, A N Pechenov, T. I. Berezina, L. E. Reshetova, P V Shapkin, I. V. Akimova
Rok vydání: 1985
Předmět:
Zdroj: Soviet Journal of Quantum Electronics. 15:867-868
ISSN: 0049-1748
DOI: 10.1070/qe1985v015n06abeh007178
Popis: An investigation was made of the influence of an excess sulfur partial pressure in the range 10−3– (2×102) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-excited lasers. The best laser characteristics, including degradation stability, were obtained for sulfur pressures of 1–10 Torr.
Databáze: OpenAIRE