| Autor: |
J. Lehoux, Y. Gourdel, Eric Lallier, L. Becouarn, Bruno Gérard, M. Brevignon |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013). |
| Popis: |
Summary form only given. GaAs is a very interesting material for mid IR nonlinear frequency conversion. To obtain shorter periods several techniques are based on patterning a template substrate thanks to photolithography have been proposed. After having prepared the template a growth is made on it with organometallic chemical vapor deposition (OMCVD) or molecular beam epitaxy (MBE). However these techniques have a low deposition rate and waveguide structures must be used. The purpose of this contribution is to study and to characterize the growth of a thick layer of GaAs on a pattern of antiphase domains (APDs) for future bulk quasi-phase matched nonlinear applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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