| Autor: |
Jian-Ping Chen, Yan Zhirui, Hao-Feng Jiang, Jia-Min Guo, Yiqi Zhuang, Cong Li |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| DOI: |
10.1109/icsict.2018.8564858 |
| Popis: |
In this paper, we propose and investigate a GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As heterojunction L-shaped tunnel FET (HL-TFET) using Sentaurus TCAD simulations. Further, the HL-TFET is optimized to separately control ON-current and OFF-current by inserting a wide-bandgap spacer region between the channel and drain regions. Simulation results indicate that ON-current of HL-TFET is increased about three orders of magnitude compared with conventional L-shaped TFET. What’s more, the optimized HL-TFET not only keeps high ON-current but also reduces OFF-current effectively. It is demonstrated that ON-current as high as 250 μA/μm with an I ON /I OFF ratio of 7.5×109 at V ds = 0.5 V is achieved in an optimized HL-TFET. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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