HBr-K2Cr2O7-H2O etching system for indium phosphide

Autor:	Ben H. Erné, T. Görög, John J. Kelly, Roberto Fornari, J.L. Weyher
Rok vydání:	1994
Předmět:	Aqueous solution Inorganic chemistry Polishing Crystal structure Condensed Matter Physics Crystallographic defect Isotropic etching Inorganic Chemistry chemistry.chemical_compound chemistry Etching (microfabrication) Materials Chemistry Indium phosphide Physical chemistry Dislocation
Zdroj:	Journal of Crystal Growth. 141:57-67
ISSN:	0022-0248
DOI:	10.1016/0022-0248(94)90092-2
Popis:	InP surfaces with (100), (111)In and (111)P orientations were etched with HBr-K 2 Cr 2 O 2 -H 2 O solutions. Etching could be diffusion-controlled (giving rise to polishing) or purely kinetically controlled (revealing crystallographic defects), depending on the solution composition. These experimental results have been summarized in a ternary diagram which allows a complete surface treatment of indium phosphide: uniform etching for the elimination of process damage, dislocation revealing and identification of polar 〈110〉 crystallographic orientations, elimination of surface oxides and surface preparation prior to further etching studies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::24c804de1097c0701d7b411ef8576fe9 https://doi.org/10.1016/0022-0248(94)90092-2 Zobrazit plný text záznamu