| Popis: |
The deep center traps of AlGaAs/GaAs GRIN-SCH SQW lasers fabricated by MBE and MOCVD have been studied using DLTS (Deep Level Transient Spectroscopy) technique.The DLTS spectra show that deep (electron and hole) traps, having larger capture cross sections and concentrations, are observed in n-AlGaAs layers of lasers in addition to the well-known DX center. For the MBE lasers, deep hole trap H1 may spatially localize in the interfacial regions of discontinous variation A1 mole fraction of n AlGaAs layers with X/sub AI/=0.20 /spl rarr/0.43 and X/sub AI=0.43/, and deep electron trap E3 may spatially localize in interfacial regions of discontinous variation Al mole fraction of n AlGaAs layer with X/sub AI=0.43/.For the MOCVD lasers,deep electron trap E3 may spatially localize in n-AlGaAs layers with X/sub Al/=0.18 /spl rarr/0.30 and X/sub AI/=0.30 and DX center may spatially localize in the interfacial regions of discontinous variation Al mole fraction of n-AlGaAs layers with X/sub AI/=0.18 /spl rarr/0.30 mid X/sub AI/=0.30. |
