Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxy
| Autor: | Sun Zhongzhe, Soon Fatt Yoon, Yew Kuok Chuin |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Reflection high-energy electron diffraction
Photoluminescence Condensed matter physics business.industry Chemistry Heterojunction Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Inorganic Chemistry Condensed Matter::Materials Science Wavelength Electron diffraction Quantum dot Materials Chemistry Optoelectronics business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 259:40-46 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(03)01580-x |
| Popis: | InAsN quantum dots were grown on GaAs (0 0 1) substrate by a solid source molecular beam epitaxy (SSMBE) system equipped with a radio-frequency (RF) nitrogen plasma source. The quantum dot formation was confirmed by reflection high-energy electron diffraction (RHEED) observation and atomic force microscopy (AFM) measurement. Dot density as high as ∼1×1011 cm−2 was achieved. Low-temperature and room-temperature photoluminescence measurements were carried out to investigate the optical property of the quantum dots. Multilayer quantum dot structures were found to shift the photoluminescence emission peak to longer wavelength from 1025 to 1120 nm. |
| Databáze: | OpenAIRE |
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