Impact of displacement damage on single event transient charge collection in SiGe HBTs
| Autor: | Chaohui He, Jia-Nan Wei, Yonghong Li, Pei Li, Hong-Xia Guo |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Physics
Nuclear and High Energy Physics 010308 nuclear & particles physics business.industry Heterojunction bipolar transistor Bipolar junction transistor Charge (physics) Heterojunction Carrier lifetime 01 natural sciences Fluence 0103 physical sciences Optoelectronics Transient (oscillation) 010306 general physics business Instrumentation Technology CAD |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 938:29-35 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2019.05.098 |
| Popis: | This paper presents an investigation into the impact of neutron-induced displacement damage on the single event transient (SET) charge collection in silicon–germanium heterojunction bipolar transistors (SiGe HBT) based on pulsed laser micro-beam experiment and technology computer aided design (TCAD) simulation. Experimental results show that the transient charge collection of the collector terminal decreases after neutron irradiation with a fluence of 5 × 1013 n/cm2 . In addition, the decrease of charge collection is more significant outside the collector–substrate (C–S) junction than inside. Combining with the TCAD simulation results, it is confirmed that the minority carrier lifetime which is shortened by neutron-induced defects plays an important role in the decrease of charge collection, and the disparity between the decreases of charge collection outside and inside the C–S junction is related to the dominating collection mechanism and transient duration. |
| Databáze: | OpenAIRE |
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