Two-Component Corrosion Inhibitor Working Mechanism on Cu Surface

Autor:	B. Chi, Q. Ye, W. C. Yu, J. F. Wang, P. C. Liu, Sean Y. Chen, Ching-Hsun Chao, S. H. Wu
Rok vydání:	2012
Předmět:	Corrosion inhibitor chemistry.chemical_compound Benzotriazole Materials science chemistry Passivation Chemical engineering Metallurgy Abrasive Slurry Wafer Solubility Corrosion
Zdroj:	ECS Transactions. 44:525-529
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3694364
Popis:	Cu CMP slurries are typically composed of abrasive particles, oxidants, etchants and corrosion inhibitors. The Cu surface is planarized by the CMP process via a repetitive process of oxidation by oxidants, followed by the corrosion inhibitor absorption on the Cu surface and the polish behavior generated by the etchant and abrasive particles. Benzotriazole (BTA) is a commonly used corrosion inhibitor in Cu CMP slurries to effectively prevent Cu from being etched by forming a passivation layer of Cu-BTA. However, benzotriazole exhibits poor solubility in water that can contribute to increased organic residue defect on the wafer surface. In this paper, we describe how we added Component A to be a corrosion inhibitor that was linked with benzotriazole by H-bonding to protect the Cu surface. We investigated the working mechanism for controlling Cu removal rate.
Databáze:	OpenAIRE
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