Nanostructuring and Thermoelectric Characterization of (GaSb)3(1−x)(Ga2Te3) x
| Autor: | Shinsuke Yamanaka, Toshimichi Nakayama, Chang-eun Kim, Ken Kurosaki, Masaaki Shuto, Hiroaki Muta, Yuji Ohishi |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Nanostructure Solid-state physics Annealing (metallurgy) Crystal structure Condensed Matter Physics Thermoelectric materials Electronic Optical and Magnetic Materials Crystallography Thermal conductivity Atom Thermoelectric effect Materials Chemistry Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 42:1719-1724 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | GaSb is a promising thermoelectric material that exhibits good electrical properties. However, it has a high lattice thermal conductivity (κ lat). Nanostructured bulk materials have been attracting interest because they effectively scatter phonons, significantly reducing κ lat. AgPb m SbTe m+2 (LAST-m) compounds have recently been reported to have low κ lat. These compounds have a NaCl structure, similar to that of binary PbTe, where Ag and Sb occupy the Pb site. In these compounds, two divalent Pb atoms are replaced with a monovalent Ag atom and a trivalent Sb atom to maintain charge compensation. In the present study, we reduced κ lat of GaSb by applying the same principle as in LAST-m. Specifically, we substituted Te for Sb and generated vacancies at the Ga site to maintain charge compensation. This produced compounds with chemical compositions of (GaSb)3(1−x)(Ga2Te3) x (x = 0, 0.05, 0.10, and 0.25), where GaSb and Ga2Te3 both have the zincblende crystal structure. We employed two different annealing conditions: annealing at 833 K followed by quenching, and annealing at 833 K followed by cooling to room temperature over 3 days. The former annealed samples with compositions of x = 0.05 and 0.10 had nanoscale Ga-rich precipitates and exhibited a large reduction in κ lat. |
| Databáze: | OpenAIRE |
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