Scanning ion deep level transient spectroscopy

Autor:	Jamie S. Laird, Chennupati Jagadish, G.J.F. Legge, R.A. Bardos, David N. Jamieson
Rok vydání:	1999
Předmět:	Nuclear and High Energy Physics Microprobe Deep-level transient spectroscopy Silicon business.industry Schottky barrier chemistry.chemical_element Plasma Ion Semiconductor chemistry Atomic physics business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 158:464-469
ISSN:	0168-583X
Popis:	We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The technique known here as Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is analogous to the bulk technique Deep Level Transient Spectroscopy (DLTS). In SIDLTS, the electron–hole (e-h) plasma induced by the MeV ion provides the trap-filling pulse. A simple theoretical framework for sensitivity is discussed as is the system developed to achieve it. A comparison of DLTS and SIDLTS on an implanted Au–Si Schottky barrier is made, including quantitative estimations of the trap activation energies and sensitivity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::24abef0e437b6318ac2add3ae0dae257 https://doi.org/10.1016/s0168-583x(99)00329-8 Zobrazit plný text záznamu Full Text from ScienceDirect