Low-voltage diode-configured sige:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT/fMAX) SiGe:C HBT device

Autor:	Steven H. Voldman, Ephrem G. Gebreselasie
Rok vydání:	2004
Předmět:	Materials science business.industry Heterojunction bipolar transistor Transistor BiCMOS Silicon-germanium law.invention chemistry.chemical_compound chemistry CMOS law Low-power electronics Optoelectronics business Low voltage Diode
Zdroj:	2004 Electrical Overstress/Electrostatic Discharge Symposium.
DOI:	10.1109/eosesd.2004.5272633
Popis:	As the faster transistors are produced in BiCMOS SiGe technology, low voltage trigger ESD networks will be required to achieve good ESD protection. Diode-configured SiGe HBT trigger elements are used in a SiGe C HBT power clamp network in a 200/285 GHz fT/fMAX silicon germanium heterojunction bipolar transistor (HBT) technology in a 0.13-propm CMOS technology base.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::24a5666e57ff07f42f416a0e24f734d5 https://doi.org/10.1109/eosesd.2004.5272633 Zobrazit plný text záznamu