Kinetics of thermal decomposition of triethylgallium, trimethylgallium, and trimethylindium adsorbed on GaAs(100)
| Autor: | Vincent M. Donnelly, R. J. Shul, J. A. McCaulley |
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| Rok vydání: | 1991 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:2872-2886 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.577146 |
| Popis: | We report studies of the kinetics of thermal decomposition of triethylgallium (TEGa), trimethylgallium (TMGa), and trimethylindium (TMIn) adsorbed on GaAs(100) in ultrahigh vacuum. The adsorbed layers were prepared by dosing GaAs(100) at room temperature, to either saturated coverage or coverages below saturation. The relative coverage of carbon was monitored by x‐ray photoelectron spectroscopy (XPS) as the substrate temperature was slowly increased (0.6–3.2 °C/min). Products were detected at faster heating rates (0.7–6 °C/s) with a differentially pumped quadrupole mass spectrometer. The substrate temperature was measured by infrared laser interferometric thermometry. The kinetic analysis also makes use of XPS and mass spectrometric data on laser‐induced, rapid thermal decomposition (heating rates of ∼1011 °C/s ). TEGa dissociatively chemisorbs on GaAs(100) at room temperature. Heating the substrate from room temperature to ∼500 °C results in desorption of a Ga–alkyl at low temperature, ascribed mostly to... |
| Databáze: | OpenAIRE |
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