Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices
| Autor: | Tetsuji Arai, Hiroki Nakaie, Kazuki Kamimura, Hiroyuki Nakamura, Satoshi Ariizumi, Satoki Ashizawa, Keisuke Arimoto, Junji Yamanaka, Tetsuya Sato, Kiyokazu Nakagawa, Toshiyuki Takamatsu |
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| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
010302 applied physics Materials science Hydrogen Silicon business.industry Metallurgy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ion source Volumetric flow rate Nickel chemistry Transition metal 0103 physical sciences Electrode Optoelectronics Wafer 0210 nano-technology business |
| Zdroj: | Journal of Materials Science and Chemical Engineering. :29-33 |
| ISSN: | 2327-6053 2327-6045 |
| DOI: | 10.4236/msce.2016.41006 |
| Popis: | We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 10 sccm. We confirmed that the temperatures of transition-metal films increased to above 800。C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of nickel films deposited on silicon wafers and formed nickel silicide electrodes. We found that this heat phenomenon automatically stopped after the nickel slicidation reaction finished. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability of silicon ultralarge-scale integration devices. |
| Databáze: | OpenAIRE |
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