Non-local transport in numerical simulation of GaN LED
| Autor: | Z. M. Simon Li |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Computer simulation Auger effect business.industry Multiple quantum Non local Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake Modeling and Simulation symbols Optoelectronics Voltage droop Electrical and Electronic Engineering business Voltage |
| Zdroj: | Journal of Computational Electronics. 14:409-415 |
| ISSN: | 1572-8137 1569-8025 |
| DOI: | 10.1007/s10825-015-0693-1 |
| Popis: | We propose a device modeling theory based on an improved drift---diffusion solution that is suitable for simulation of the efficiency droop effect in GaN LED. Our theory modifies the drift---diffusion transport by adding a non-local carrier transport component that mimics the effect of hot carriers near the multiple quantum well region. The non-local transport model is supported by recent experimental evidence of Auger-induced hot carriers as well as explaining the experimental low turn-on voltage that conventional drift---diffusion theory fails to predict. A surprising finding from the simulation is that the hot-Auger carriers have a positive effect of reducing the junction resistance of the LED and thus help improve the overall wall-plug efficiency. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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