An amorphous silicon thin-film transistor with fully self-aligned top gate structure
| Autor: | Ian D. French, I.J. Stemp, Peter W. Green, M. J. Powell, Carl Glasse |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Amorphous silicon
Electron mobility Materials science Silicon business.industry Transistor chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Ion implantation chemistry Silicon nitride Etching (microfabrication) law Thin-film transistor Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 21:104-106 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.823570 |
| Popis: | We have developed a novel fully self-aligned top gate amorphous silicon thin-film transistor, which shows excellent transistor characteristics. Self-alignment is achieved by patterning the gate electrode and then etching the silicon nitride gate insulator, followed by silicidation and ion implantation of the exposed a-Si in the contact regions. We obtain a long channel saturated mobility of 0.9 cm/sup 2/ V/sup -1/ s/sup -1/, while for channel lengths of 6 /spl mu/m, we obtain an effective mobility of 0.6 cm/sup 2/ V/sup -1/ s/sup -1/, in the saturated region and 0.5 cm/sup 2/ V/sup -1/ s/sup -1/, in the linear region. This high level of performance, together with the negligible parasitic capacitance of the self-aligned structure, makes this transistor suitable for new demanding applications in active matrix liquid crystal displays and large area X-ray image sensors. |
| Databáze: | OpenAIRE |
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