Growth and defect characterization of doped and undoped β-Ga2O3 crystals

Autor:	John S. McCloy, Jani Jesenovec, Benjamin Dutton, Christopher Pansegrau, Cassandra Remple, Marc H. Weber, Santosh Swain, Matthew McCluskey, Michael Scarpulla
Rok vydání:	2022
Zdroj:	Oxide-based Materials and Devices XIII.
DOI:	10.1117/12.2611852
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2492c23269af0a943f8350e5ebd0e395 https://doi.org/10.1117/12.2611852 Zobrazit plný text záznamu