Failure model and detecting method for MOSFET degradation in DC-DC power converters
| Autor: | Guan Yong, Wang Guohui, Lifeng Wu, Xiao-Juan Li, Peng-Fei Dong |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Bootstrapping (electronics)
Computer science MOSFET General Engineering Electronic engineering General Physics and Astronomy General Medicine Power MOSFET Converters General Agricultural and Biological Sciences General Biochemistry Genetics and Molecular Biology Degradation (telecommunications) Power (physics) |
| Zdroj: | Scientific Research and Essays. 9:169-173 |
| ISSN: | 1992-2248 |
| DOI: | 10.5897/sre2014.5856 |
| Popis: | MOSFET is the most commonly used devices in DC-DC power converters, and its performance is important to the prognosis and health management of power. The paper proposes a degradation analysis model for MOSFET in DC-DC power converters. A method for detecting the degradation of MOSFET is also introduced. Simulations have shown that the method can predict deterioration in the performance of MOSFET. The simulation results are good agreement with the theory. Key words: DC-DC converter, degradation, MOSFET. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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