Influence of oxygen pressure on the ferroelectric properties of epitaxialBiFeO3thin films by pulsed laser deposition

Autor: Kui Yao, Ngeah Theng Chua, Lu You, Lang Chen, Junling Wang
Rok vydání: 2009
Předmět:
Zdroj: Physical Review B. 80
ISSN: 1550-235X
1098-0121
DOI: 10.1103/physrevb.80.024105
Popis: The growth window of multiferroic ${\text{BiFeO}}_{3}$ thin films is very small. Both temperature and oxygen pressure will affect the film quality and phase purity significantly. We demonstrate here that even within the window where phase pure ${\text{BiFeO}}_{3}$ thin films can be obtained, different oxygen partial pressures still lead to substantial variation in Bi/Fe ratio in the film, which closely link with the corresponding ferroelectric properties. Piezoelectric force microscopy also reveals significant difference in the domain structures of these films. A defect-dipole complex model is proposed to explain the difference in the electrical properties and domain structures for films grown under different oxygen pressures.
Databáze: OpenAIRE