Influence of oxygen pressure on the ferroelectric properties of epitaxialBiFeO3thin films by pulsed laser deposition
Autor: | Kui Yao, Ngeah Theng Chua, Lu You, Lang Chen, Junling Wang |
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Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Physical Review B. 80 |
ISSN: | 1550-235X 1098-0121 |
DOI: | 10.1103/physrevb.80.024105 |
Popis: | The growth window of multiferroic ${\text{BiFeO}}_{3}$ thin films is very small. Both temperature and oxygen pressure will affect the film quality and phase purity significantly. We demonstrate here that even within the window where phase pure ${\text{BiFeO}}_{3}$ thin films can be obtained, different oxygen partial pressures still lead to substantial variation in Bi/Fe ratio in the film, which closely link with the corresponding ferroelectric properties. Piezoelectric force microscopy also reveals significant difference in the domain structures of these films. A defect-dipole complex model is proposed to explain the difference in the electrical properties and domain structures for films grown under different oxygen pressures. |
Databáze: | OpenAIRE |
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