Reactive ion etching of InAlAs with Ar/Cl2 mixtures for ridge waveguide lasers
| Autor: | Johann Peter Reithmaier, S. Hausser, Roland Germann |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Argon
Chemistry Analytical chemistry chemistry.chemical_element Material system Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Smooth surface Ridge waveguide lasers Etching (microfabrication) Chlorine Dry etching Electrical and Electronic Engineering Reactive-ion etching |
| Zdroj: | Microelectronic Engineering. 21:345-348 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(93)90088-m |
| Popis: | We have investigated the etching characteristics of InAlAs for reactive ion etching (RIE) with mixtures of argon (Ar) and chlorine (Cl 2 ). Nearly vertical walls and a smooth surface morphology can be achieved for etch rates of up to 200 nm/min. For an application we have produced dry-etched ridge waveguide lasers in the In(Ga)AlAs/InGaAs material system with threshold currents as low as 12 mA. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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