Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers
| Autor: | Wolfgang Skorupa, Thoralf Gebel, J. Zhao, Lars Rebohle, J von Borany |
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| Rok vydání: | 2002 |
| Předmět: |
Condensed matter physics
business.industry Chemistry Charge (physics) Electroluminescence Condensed Matter Physics Thermal conduction Space charge Electronic Optical and Magnetic Materials Impact ionization Field electron emission Electric field Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Current density |
| Zdroj: | Solid-State Electronics. 46:661-664 |
| ISSN: | 0038-1101 |
| Popis: | The electrical conduction mechanism of Ge-implanted SiO 2 films exhibiting room-temperature blue electroluminescence with a power efficiency of up to 5×10 −4 [Appl. Phys. Lett. 71 (1997) 2809] is investigated. In detail it will be shown that the current–voltage characteristic of Ge-implanted SiO 2 layers for applied electric fields between 4.5 and 7 MV cm −1 can be modeled very well with the space charge limited (SCL) conduction mechanism in the trap-filled-limited (TFL) region. The current density j shows a power law dependence j ∝ E α of the applied electric field E , and the temperature dependence of α exhibits the typical behavior of TFL injection currents. For applied electric fields above 7 MV cm −1 the charge transport mechanism is explained by SCL currents which are superimposed by effects of field emission, impact ionization, and electron–hole recombination. |
| Databáze: | OpenAIRE |
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