High reliability, high-yield, high modulation bandwidth, low threshold current 1.55 μm MQW laser by new in-situ etching technique

Autor: M. Meliga, D. Bertone, Roberto Paoletti, S. Murgia, R. Campi, Giuliana Morello, Ruiyu Fang
Rok vydání: 2002
Předmět:
Zdroj: 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).
DOI: 10.1109/ecoc.1998.732443
Popis: For the first time to our knowledge, an InP based Fabry-Perot MQW semiconductor laser is obtained by using an in-situ etching technique. Good static and dynamic laser characteristics together with high process yield and reliability confirm the validity of this new technological process.
Databáze: OpenAIRE