An Analysis on Device-related Properties of the GaInSb Thermophotovoltaic Cell
| Autor: | Yun Liu, Xin-Cun Peng, Ji-Jun Zou, Wenjuan Deng |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science 010504 meteorology & atmospheric sciences Auger effect business.industry Energy conversion efficiency Doping Radiation 01 natural sciences symbols.namesake Thermophotovoltaic 0103 physical sciences symbols Radiator (engine cooling) Optoelectronics Dislocation business 0105 earth and related environmental sciences Common emitter |
| Zdroj: | DEStech Transactions on Environment, Energy and Earth Sciences. |
| ISSN: | 2475-8833 |
| DOI: | 10.12783/dteees/epme2018/24643 |
| Popis: | The device-related parameters of 0.5eV Ga0.75In0.25Sb TPV cell were analyzed by considering the effects of carrier recombination and incident radiation spectra. Regarding the investigated device, we had demonstrated that the optimum structure of the device consisted of a 0.2-0.5μm n-type baser and a 4.5-6μm p-type emitter with a doping concentration of 1-3×1017cm-3. The Auger recombination sets an ultimate limit on performance of the device; however, it needs a dislocation density of Nt 6Ω/cm2 to approach the Auger-limited performance. An analysis on incident radiation spectra showed that the energy conversion efficiency can be improved by increasing the temperature of the radiator and the sub-bandgap photo recirculation efficiency. |
| Databáze: | OpenAIRE |
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