| Autor: |
Ioannis Raptis, Marco Ardito, Nikos Glezos, Anja Rosenbusch, Panagiotis Argitis, Leonardo Scopa, G. Meneghini, George P. Patsis, Rafaelle Palumbo, Evangelos Valamontes |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.309597 |
| Popis: |
A fast simulator for electron beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. This method has been proved much faster than Monte Carlo. All important phenomena are included in the calculation. Additionally, the reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists are taken into account. The result obtained by the simulation are compared successfully with experimental and other simulation results for conventional and chemically amplified resists. The case of substrates consisting of more than one layer is considered in depth as being of great importance in electron beam patterning. By using SELID, it is possible to forecast the resist profile with considerable accuracy for a wide range of resists, substrates and energies. Additionally, proximity effect parameters are extracted easily for use in any proximity correction package. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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