Back-End-of-Line-Compatible Anneal-Free Ferroelectric Field-Effect Transistor

Autor:	Shih-Hao Tsai, Zhonghua Li, Ma Mo Mo Ei Phyu, Zihang Fang, Sonu Hooda, Chun-Kuei Chen, Evgeny Zamburg, Aaron Voon-Yew Thean
Rok vydání:	2023
Zdroj:	2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
DOI:	10.1109/edtm55494.2023.10103049
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::242ce0331bbcbf3c358fa64c65e81353 https://doi.org/10.1109/edtm55494.2023.10103049 Zobrazit plný text záznamu