RF performance improvement on 22FDX® platform and beyond
| Autor: | Yogadissen Andee, Tom Herrmann, Alban Zaka, Zhixing Zhao, Nandha Kumar Subramani, Steffen Lehmann |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Computer science Process (computing) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Capacitance Stress (mechanics) Logic gate 0103 physical sciences Electronic engineering Calibration Figure of merit Radio frequency Performance improvement 0210 nano-technology |
| Zdroj: | 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| Popis: | The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined elements show ft/fmax improvement up to about 1.13/1.1x (NFET) and about 1.32/1.24x (PFET) over standard devices mainly driven by mechanical stress and parasitic R/C elements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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