| Autor: |
Gu Jh, Liu Fz, Zhu Mf, Ding K, Liu Jl, Zhou Bq, Li Gh, Dong Bz, Zhou Yq |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
Acta Physica Sinica. 54:2172 |
| ISSN: |
1000-3290 |
| DOI: |
10.7498/aps.54.2172 |
| Popis: |
The microstructures of hydrogenated microcrystalline silicon (μc-Si:H) thin fil ms, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD( HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small ang le x_ray scattering(SAXS) measurement. The SAXS data show that the microstructur es of the μc-Si:H films display different characteristics for different deposit ion techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bom bardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μc-Si:H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilti ng SAXS measurement indicates that the distribution of micro-voids in the film i s anisotropic. The Fouriertransform infrared spectra confirm the SAXS data. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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