CMOS terahertz receivers
| Autor: | S. Kshattry, S. Ghosh, Eunyoung Seok, Y. Zhu, J. Newman, Insoo Kim, Wooyeol Choi, Navneet Sharma, Christopher F. Neese, Qian Zhong, Swaminathan Sankaran, Ruonan Han, Z. Chen, Zeshan Ahmad, Y. Zhang, Dae Yeon Kim, F. Jalalibidgoli, K. O. Kenneth, Pranith R. Byreddy, James P. McMillan, Zhiyu Chen, I. Momson, Shenggang Dong, Dongha Shim, B. Pouya, Rui Xu, P. Yelleswarapu, T. Dinh, F. C. De Lucia, Chuying Mao |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Terahertz radiation Detector Transistor 020206 networking & telecommunications Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Integrated circuit law.invention CMOS Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Optoelectronics business NMOS logic Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | CICC |
| DOI: | 10.1109/cicc.2018.8357054 |
| Popis: | Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide Semiconductor) integrated circuits technology an alternative for realizing capable and affordable THz systems. Coherent detection up to 410 GHz and incoherent detection up to 10 THz as well as an almost fully integrated receiver working from 225–280 GHz have been demonstrated using CMOS. Despite the fact that f max of NMOS transistors has peaked around 320 GHz, it should be possible to coherently detect signals at frequencies beyond 1 THz and with some straightforward modification of processes, to incoherently detect signals at 40 THz in CMOS. |
| Databáze: | OpenAIRE |
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