Charge-collection mechanisms of heterostructure FETs
| Autor: | Dale McMorrow, Lan Hu Tran, A.B. Campbell, Todd R. Weatherford, A. Peczalski, Joseph S. Melinger, Alvin R. Knudson, N. Thantu |
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| Rok vydání: | 1994 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Transistor Heterojunction Semiconductor device Integrated circuit Nanosecond equipment and supplies Gallium arsenide law.invention chemistry.chemical_compound Nuclear Energy and Engineering chemistry law Picosecond Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nuclear Science. 41:2055-2062 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/23.340542 |
| Popis: | Ion- and laser-induced charge-collection transients measured for AlGaAs-InGaAs hetero-insulated-gate field-effect transistors (HIGFETs) reveal evidence for two mechanisms of enhanced charge collection: a channel-modulation mechanism that dominates the charge-collection processes at positive gate biases and can persist for several nanoseconds; and a parasitic bipolar transistor mechanism that shows a sensitive dependence on the density of free carriers injected into the device, and is complete within a few hundred picoseconds. The results reinforce the utility of the laser technique for investigating the charge-collection mechanisms of semiconductor devices. > |
| Databáze: | OpenAIRE |
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