Electrical characterization of SiSi0.7Ge0.3 quantum well wires fabricated by low damage CF 4 reactive ion etching
| Autor: | S. J. Koester, J. O. Chu, Kam-Leung Lee, Khalid EzzEldin Ismail |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Electron mobility
Materials science Passivation Annealing (metallurgy) fungi technology industry and agriculture Analytical chemistry Heterojunction Quantum Hall effect Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Weak localization Electrical and Electronic Engineering Reactive-ion etching Quantum well |
| Zdroj: | Microelectronic Engineering. 35:33-36 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(96)00131-1 |
| Popis: | Nearly damage free etching of a high mobility Si SiGe heterostructure is obtained by using very low power reactive ion etching and precise end-point detection. Conductance versus wire width plots of 0.08 μm to 1 μm wide Si SiGe quantum well wires show the combined nonconducting width at the edges to be 0.13 μm ± 0.01 μm, in agreement with weak localization studies. Mobility vs. sheet concentration measurements indicate little or no degradation in electron mobility after processing. Furthermore, our study demonstrates very little difference between wires with and without post-RIE (reactive-ion etching) annealing and passivation treatment. Application of this process for fabricating point contacts and other quantum effect devices is demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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