Plasma Diagnostics and CFD Modeling of Microcrystalline Silicon Deposition Process in a Hollow-Cathode Discharge Reactor
| Autor: | Tung, F.C., Chen, K.-C., Chen, C.-M., Wei, T.-C., Chau, S.-W., Lin, C.H. |
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| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: | |
| DOI: | 10.4229/23rdeupvsec2008-3av.2.37 |
| Popis: | 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 2459-2462 Plasma enhanced chemical vapor deposition (PECVD) of microcrystalline silicon grown at low temperature attracts great attention especially for the manufacture of thin film solar cells. In this paper, plasma diagnostics and numerical simulation on hollow-cathode plasma reactor for microcrystalline silicon deposition are reported. The effects of operating parameters on electron temperature, electron density and species concentration were investigated by plasma diagnostics. It was found that plasma uniformity can be optimized by the input power and chamber pressure. Further, the substrate heating behavior and the flow field dynamics in in-line deposition process were studied by numerical simulation. The effect of operating parameters on substrate temperature distribution and velocity vector profile are realized. |
| Databáze: | OpenAIRE |
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