Close spaced vapor transport deposition of Cu2ZnSnS4 thin films: Effect of iodine pressure
| Autor: | Cheikh Sene, K. Djessas, A. Sagna, S.E. Grillo, K. Medjnoun |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Band gap Scanning electron microscope Mechanical Engineering Metals and Alloys Analytical chemistry Mineralogy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound symbols.namesake chemistry Mechanics of Materials 0103 physical sciences Materials Chemistry symbols CZTS Crystallite Thin film 0210 nano-technology Luminescence Raman spectroscopy |
| Zdroj: | Journal of Alloys and Compounds. 685:699-704 |
| ISSN: | 0925-8388 |
| Popis: | High quality Cu2ZnSnS4 (CZTS) ingots obtained by cooling a molten stoichiometric mixture have been deposited as thin films on soda-lime glass by Close Spaced Vapor Transport (CSVT). Iodine pressure is one of the important parameters for the CSVT process. The effect of iodine pressure on compositional, morphological, structural, electrical and optical properties of CZTS thin films has been investigated. X-ray diffraction and Raman spectroscopy results revealed the formation of polycrystalline CZTS with a (112) preferred orientation plane and Raman shift of 338 cm−1 respectively. Iodine pressure does not have a significant effect on the composition nor on the electrical properties as measured by Hall effect measurements. However, scanning electron microscopy (SEM) and UV–Vis–NIR spectrophotometer data revealed an increase of crystallite size and band gap energy (1.47–1.56 eV) with iodine pressure. The photoluminescence (PL) measurements at 77 K exhibit emission peaks around 1.30 eV. The origin of this luminescence is attributed to band-to-impurity (BI) recombination. |
| Databáze: | OpenAIRE |
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