57Fe Mössbauer investigations in p-type Silicon Germanium single crystals
| Autor: | D. Naidoo, V. V. Naicker, G. Weyer, Haraldur P. Gunnlaugsson, R. Mantovan, Krish Bharuth-Ram, Marco Fanciulli, R. Sielemann |
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| Rok vydání: | 2008 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon chemistry.chemical_element Germanium Activation energy Condensed Matter Physics Crystallographic defect Atomic and Molecular Physics and Optics Ion Crystallography Ion implantation chemistry Vacancy defect Interstitial defect Physical and Theoretical Chemistry |
| Zdroj: | Hyperfine Interactions. 188:11-17 |
| ISSN: | 1572-9540 0304-3843 |
| DOI: | 10.1007/s10751-008-9880-9 |
| Popis: | Radioactive 57Mn+(T 1/2 = 1.5 min) ions have been implanted at the ISOLDE facility at CERN with 60 keV energy to fluences |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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