Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes

Autor:	Jae Seung Shin, Mingye Kim, Jin Hyun Ma, Jun Hyung Jeong, Hui Wung Hwang, Jeong Won Kim, Seong Jun Kang
Rok vydání:	2022
Předmět:	Materials Chemistry General Chemistry
Zdroj:	Journal of Materials Chemistry C. 10:5590-5597
ISSN:	2050-7534 2050-7526
DOI:	10.1039/d1tc06117h
Popis:	Vanadium oxide (V2O5) doped with Li (5, 10, and 15 mol%) was synthesized using an easy and low-cost solution process method and was used as a hole-injection layer (HIL) for quantum-dot light-emitting diodes (QLEDs).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::23d778de71cc7445706bb6be6dbddf36 https://doi.org/10.1039/d1tc06117h Zobrazit plný text záznamu