Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures
| Autor: | V. P. Shukailo, Anatoly M. Strel'chuk, V. V. Zelenin, A. A. Lebedev, A. N. Kuznetsov, N. G. Orlov, N.S. Savkina, V. T. Gromov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Equivalent series resistance business.industry Mechanical Engineering Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Mechanics of Materials 0103 physical sciences Optoelectronics General Materials Science Neutron Current (fluid) 0210 nano-technology Neutron irradiation business Radiation hardening Recombination current Diode |
| Zdroj: | Materials Science Forum. 897:459-462 |
| ISSN: | 1662-9752 |
| Popis: | Neutron irradiation (~1 MeV, dose 1014-5.6∙1015 neutron/cm2) of packaged diodes based on 6H-SiC pn structures (with the base n-layer doped to ~5∙1016 cm-3) has been studied. In addition to the well-known rise in the series resistance of the diodes, the effect of a partial suppression of the excess current in both forward-and reverse-biased diodes and that of an increase in the recombination current, probably associated with the decrease in the nonequilibrium carrier lifetime, were discovered and discussed. These effects are common to 6H-and 4H-SiC pn structures. |
| Databáze: | OpenAIRE |
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