Investigation of conductive and transparent ITO/Ni/ITO multilayer films deposited by a magnetron sputter process

Autor: Daeil Kim, June-Dong Kim, C.W. Jeong, C.H. Shin, Jong-Sick Park, Yong-Jai Kwon
Rok vydání: 2010
Předmět:
Zdroj: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268:131-134
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2009.10.180
Popis: Transparent conducting ITO/Ni/ITO films were deposited by RF magnetron sputtering of Sn-doped In 2 O 3 and DC magnetron sputtering of Ni on unheated polycarbonate substrates. Ni interlayers with thicknesses of 5, 10, and 20 nm were used as intermediate metallic layers. Changes in the work function and optical, electrical and structural properties of the films were examined with respect to Ni layer thickness. The work function was measured to be about 4.5 eV and was found to be independent of Ni layer thickness. However, the structural, optical, and electrical properties of the films were influenced by the Ni thickness. As-deposited ITO single layer films showed In 2 O 3 diffraction peaks for the (2 2 2) and (4 0 0) planes, while after insertion of the Ni layer between ITO films, these diffraction peaks disappeared. The electrical resistivity decreased with the Ni intermediated film and the optical transmittance also decreased due to increased optical absorption. The figure of merit reached a maximum of 2.0 × 10 −3 Ω −1 for a 5 nm-thick inserted Ni film, which is greater than the value for as-deposited ITO films.
Databáze: OpenAIRE