Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations
| Autor: | Václav Holý, Jana Stránská Matějová, Ewa Grzanka, Jaroslaw Z. Domagala, Lukáš Horák, Michał Leszczyński, Peter Minárik |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Diffraction Materials science Strain (chemistry) Condensed matter physics Scanning electron microscope Vapor phase 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences General Biochemistry Genetics and Molecular Biology Reciprocal lattice 0103 physical sciences Relaxation (physics) 0210 nano-technology Layer (electronics) |
| Zdroj: | Journal of Applied Crystallography. 54:62-71 |
| ISSN: | 1600-5767 |
| Popis: | V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a series of samples grown by metal–organic vapor phase epitaxy. Analysis of the principal strains and their directions in the vicinity of V-pits explains the pseudomorphic position of the InGaN epilayer peak observed by X-ray diffraction reciprocal space mapping. The top part of the InGaN layer involving V-pits relieves the strain by elastic relaxation. Plastic relaxation by misfit dislocations is not observed. The creation of the V-pits appears to be a sufficient mechanism for strain relaxation in InGaN/GaN epilayers. |
| Databáze: | OpenAIRE |
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