Aiming for the Best Matching Between Ultra-Shallow Doping and Milli-To Femto-Second Activation

Autor:	Y. Sasaki, B. Mizuno
Rok vydání:	2007
Předmět:	Fabrication Materials science business.industry Doping Transistor law.invention Planar Semiconductor Rapid thermal processing law MOSFET Hardware_INTEGRATEDCIRCUITS Miniaturization Optoelectronics business
Zdroj:	2007 15th International Conference on Advanced Thermal Processing of Semiconductors.
DOI:	10.1109/rtp.2007.4383811
Popis:	Semiconductors have been successfully produced by the miniaturization of planar transistors and their transformation into a 3D structure. This innovation will realize ideal performance in electric devices. In this article, plasma doping combined with several state-of-the-art rapid thermal processing is shown to be a technology for enabling the fabrication of miniaturized 2D devices and advanced 3D structures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::23b00bd0a77fd896250c1fe26d0f0d4e https://doi.org/10.1109/rtp.2007.4383811 Zobrazit plný text záznamu