Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy
| Autor: | Bob Potter, Mike Mattingly, Leye Aina |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Condensed Matter::Materials Science
Electron mobility Physics and Astronomy (miscellaneous) Condensed matter physics Solid-state physics Chemistry Hall effect Doping Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Shubnikov–de Haas effect Group 2 organometallic chemistry |
| Zdroj: | Applied Physics Letters. 57:492-493 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.103630 |
| Popis: | We have grown modulation‐doped AlInAs/InP heterostructures with two‐dimensional electron gases. Hall measurements and Shubnikov‐de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, 2300 cm2/V s at 2, 77, and 300 K, with electron concentrations as high as 1.5×1012 cm−2. These results demonstrate the potential of the AlInAs/InP heterostructure for power microwave applications. |
| Databáze: | OpenAIRE |
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