High-Q UHF and SHF Bulk Acoustic Wave Resonators with Ten-Nanometer Hf0.5Zr0.5O2 Ferroelectric Transducer
| Autor: | Roozbeh Tabrizian, Toshikazu Nishida, Mayur Ghatge, Glen Walters |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Piezoelectricity Resonator Atomic layer deposition Transducer 0103 physical sciences Optoelectronics Orthorhombic crystal system Texture (crystalline) 0210 nano-technology business 010301 acoustics |
| Zdroj: | 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII). |
| DOI: | 10.1109/transducers.2019.8808308 |
| Popis: | This paper reports the use of 10nm ferroelectric hafnium-zirconium-oxide (Hf 0.5 Zr 0.5 O 2 ) transducers for implementation of high quality-factor (Q) bulk acoustic wave (BAW) resonators over ultra- and super-high-frequency regimes. Atomic layer deposited Hf 0.5 Zr 0.5 O 2 film is engineered through layering and thermo-mechanical treatment to promote dominant growth of non-centrosymmetric orthorhombic texture with large ferroelectric properties. The 10nm ferroelectric Hf 0.5 Zr 0.5 O 2 film along with 120nm magnetron-sputtered aluminum nitride piezoelectric film are used to create two-port multi-morph resonators operating in in-plane and out-of-plane BAW modes. Resonators with frequencies (f 0 ) over 38 MHz – 13 GHz are demonstrated with Qs over 400-900. Among these, the 12.84 GHz thickness-extensional BAW resonator shows a record-high f 0 ×Q of ~3.9×1012, highlighting the potential of atomically thin Hf 0.5 Zr 0.5 O 2 ferroelectric films for realization of integrated frequency references and spectral processors in cm- and mm-wave regimes for emerging 5G wireless systems. |
| Databáze: | OpenAIRE |
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