| Popis: |
P+-n long wavelength infrared radiation (LWIR) photodiodes were fabricated by arsenic diffusion into n-type HgCdTe bulk monocrystals. To improve the photodiode performance, a thickness of n-type base layer was limited. The photodiodes performance was determined from measurements of the current-voltage and spectral response characteristics. The generation-recombination current was found to be a dominant current around zero bias voltage at 77 K.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
