Structure and optical spectrum of GaN nanorods produced on Si(111) substrates
| Autor: | Jia-Bin Shen, Baoli Li, Chengshan Xue, Huizhao Zhuang, Shiying Zhang, Dexiao Wang |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Photoluminescence
Materials science X-ray photoelectron spectroscopy Transmission electron microscopy Scanning electron microscope Analytical chemistry Nanorod Light emission Condensed Matter Physics High-resolution transmission electron microscopy Instrumentation Surfaces Coatings and Films Visible spectrum |
| Zdroj: | Vacuum. 82:1224-1228 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2008.01.046 |
| Popis: | A novel method is applied to prepare nanorods. In this method, nanorods have been successfully synthesized on Si(111) substrates through annealing sputtered Ga 2 O 3 /Nb films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectra. The results show that the nanorod is single-crystalline GaN. It has a diameter of about 200 nm and lengths typically up to several micrometers. Photoluminescence spectrum under excitation at 325 nm only exhibits a UV light emission peak is located at about 368.5 nm. Finally, the growth mechanism of nanorods is also briefly discussed. |
| Databáze: | OpenAIRE |
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