Reduced operating temperature of active layer Si covered by nanocrystalline diamond film
| Autor: | Yusuke Koishikawa, Masataka Hasegawa, Akiyoshi Baba, Koichiro Oishi, Sethavut Duangchan, Ryouya Shirahama, Satoshi Matsumoto |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Thermal resistance Silicon on insulator chemistry.chemical_element 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active layer chemistry Operating temperature Sputtering Aluminium 0103 physical sciences Electrical and Electronic Engineering Thin film Composite material 0210 nano-technology |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 28:617-624 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | This paper reports the heat dissipation ability of nanocrystalline diamond (NCD) film used as an insulator in interconnection layers. The thermal resistance is used as an evidence for evaluating particular ability. There are two points to measure, that is to say, the temperature in the active Si region and that of the nearest point at the top of the insulating film. We used a thin film Si resistor covered with NCD or silicon dioxide (SiO2) on a silicon on insulator substrate. The NCD film was deposited by microwave-plasma chemical vapor deposition at 400 °C, while the SiO2 film was deposited by plasma-enhanced chemical vapor deposition at 350 °C. The thickness of the NCD film was 600 nm, while that of the SiO2 film was 300 and 500 nm. The aluminium (Al) was deposited by sputtering and patterned on the top of the insulating-film. Heat was applied to the resistor by directly applying electricity to the resistor. The temperature of the Si resistor and Al was determined from the resistance change. It was found that the thermal resistance of NCD film was approximately 14 % less than that of SiO2 film, leading to the reduction of the thin-film Si temperature by 20 °C, even though it was thicker than 100 nm. |
| Databáze: | OpenAIRE |
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