Accurate Modeling of Residual recoil-mixing during SIMS Measurements

Autor: Ming Hong Yang, Robert W. Odom
Rok vydání: 2001
Předmět:
Zdroj: MRS Proceedings. 669
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-669-j4.16
Popis: Secondary ion mass spectrometry (SIMS) is an effective and powerful analytical technique, widely used in accurately determining dopant distributions (depth profiles). However, primary ion beam induced mass transport (ion mixing), especially the residual effect during SIMS profile measurements, greatly limits theaccuracy at nanometer depth resolutions by displacing and broadening the measured depth profile. In this paper, we present a simple deconvolution algorithm based on the general characteristics of the experimentally observed SIMS response function to reduce this broadening effect, thereby providing more accurate depth profiles. The results for several specific applications of this approach are presented and its strengths and limitations are discussed.
Databáze: OpenAIRE
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