Analysis on the process of ZAO films by DC magnetron reactive sputtering

Autor:	Feng Lu, LiShi Wen, ChengHai Xu
Rok vydání:	2010
Předmět:	Reactive magnetron Materials science Electrical resistivity and conductivity business.industry Sputtering Scientific method Cavity magnetron General Engineering Electronic engineering Optoelectronics General Materials Science Thin film business
Zdroj:	Science China Technological Sciences. 54:28-32
ISSN:	1862-281X 1674-7321
Popis:	The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5×10−4 Ω·cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2371ebc5374989de7ebc87ee6080144d https://doi.org/10.1007/s11431-010-4178-y Zobrazit plný text záznamu Full text from SpringerLink