Autor: |
Kengo Yasui, Nobuo Matsumura, Junji Saraie |
Rok vydání: |
2002 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. :1536-1540 |
ISSN: |
0022-0248 |
Popis: |
We successfully fabricated wurtzite quantum-well structures with Zn 0.4 Cd 0.6 Se barrier layers and a four monolayer CdSe well layer on cubic ZnSe/GaAs(111)B substrates by molecular beam epitaxy. Although the cubic CdSe well layer grew on the cubic ZnSe/GaAs(111)B substrate, the wurtzite CdSe well layer grew on the wurtzite-Zn 0.4 Cd 0.6 Se/cubic-ZnSe/GaAs(111)B structure. The CdSe well layer was compressed in the (0001) plane and dilated to the [0001] direction judging from the X-ray diffraction measurement. Weak orange photoluminescence was observed in this quantum-well structure. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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