Growth of Graphene Layers on Silicon Carbide
| Autor: | Roman Stepniewski, Kinga Kościewicz, Jacek M. Baranowski, Jolanta Borysiuk, Wlodek Strupiński, Andrzej Wysmołek, Rafał Bożek |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Graphene Mechanical Engineering Nanotechnology Chemical vapor deposition Condensed Matter Physics Epitaxy law.invention chemistry.chemical_compound chemistry Chemical engineering Mechanics of Materials Etching (microfabrication) Transmission electron microscopy law Silicon carbide General Materials Science Graphene nanoribbons Graphene oxide paper |
| Zdroj: | Materials Science Forum. :199-202 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.615-617.199 |
| Popis: | The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies of the influence of the decomposition temperature and time, substrates roughness, etching of the substrates, heating rate, SiC dezorientation and other process parameters on the graphene thickness and quality have been conducted. Morphology and atomic scale structure of graphene was examined by Scanning Tunnelling Microscopy (STM), Transmission Electron Microscopy (TEM) and Raman scattering methods. |
| Databáze: | OpenAIRE |
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