Absorption coefficients of In0.8Ga0.2As at room temperature and 77K
| Autor: | Yi Gu, Hsby Li, Xingyou Chen, Yonggang Zhang, Luchun Zhou, Y.Y. Cao |
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| Rok vydání: | 2013 |
| Předmět: |
Absorption spectroscopy
Extended X-ray absorption fine structure Chemistry Mechanical Engineering Metals and Alloys Analytical chemistry Infrared spectroscopy Two-photon absorption Mechanics of Materials Attenuation coefficient Materials Chemistry Absorption (electromagnetic radiation) Spectroscopy Ternary operation |
| Zdroj: | Journal of Alloys and Compounds. 576:336-340 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2013.05.224 |
| Popis: | The absorption coefficients of high Indium content In 0.8 Ga 0.2 As at room temperature and 77 K have been obtained from transmission measurements by using the Fourier transformed infrared spectrometer. A high precision can be ensured for the deduced absorption coefficient value in the most interested wavelength range, through the appropriate sample design and measurement scheme selection. The absorption features of InGaAs at different temperatures and compositions are discussed. For ternary In x Ga 1− x As, the absorption coefficient at a specific composition could be achieved by translating the data from a known composition, whereas it should be careful to translate the absorption coefficients between different temperatures even for a fixed composition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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