Preparation and photoelectric properties of F-doped cuprous oxide thin films
| Autor: | Yan Li, Yong-bin Wu, Ying-jie Zhao, Fu-xin Zhong, Wei Zhou |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Oxide Analytical chemistry 02 engineering and technology 010402 general chemistry 01 natural sciences Inorganic Chemistry chemistry.chemical_compound Crystallinity X-ray photoelectron spectroscopy Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film Spectroscopy Photocurrent business.industry Organic Chemistry Doping 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Grain size 0104 chemical sciences Electronic Optical and Magnetic Materials Semiconductor chemistry 0210 nano-technology business |
| Zdroj: | Optical Materials. 111:110167 |
| ISSN: | 0925-3467 |
| DOI: | 10.1016/j.optmat.2020.110167 |
| Popis: | F-doped Cu2O films were deposited on Cu sheet substrates by hydrothermal method with different doping concentrations of F−. The structure, morphology, composition and forbidden bandwidth of the samples were characterized by XRD, SEM, EDS, UV–Vis and XPS. The photoelectric properties, capacitance-voltage and AC impedance characteristics were also studied. The undoped and F-doped Cu2O thin films are all p-type semiconductors. When the doping concentration of F− is 0.002 mol/L, the preferential growth surfaces are (110), (111) and (200), and the crystallinity of (111) plane is optimal. After doping, the grain size of F-doped Cu2O is relatively uniform. The mass percentage of F element is 0.34% and the forbidden bandwidth reduces from 1.96 eV to 1.91 eV. Photovoltage and photocurrent density increase to 0.4457 V and 2.79 mA/cm2, respectively. And the carrier concentration increases from 4.55 × 1018 to 2.58 × 1022 cm−3. The resistance value under light reduces from 183.4 Ω to 55.8 Ω. |
| Databáze: | OpenAIRE |
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